无机sol-gel法制备二氧化钒薄膜的研究

Study on VO_2 thin films prepared by inorganic sol-gel method

采用无机sol-gel法,以分析纯V2O5为原料,在Si衬底、玻璃衬底上空气中加热制备了V2O5薄膜,在不同温度下真空退火,得到了具有择优取向的VO2薄膜。研究了其制备工艺和显微结构。结果表明:在玻璃衬底和硅衬底上薄膜的最佳真空退火工艺均为480℃/2h。所制备的VO2薄膜具有沿<110>晶向生长的择优取向。薄膜表面形貌良好,颗粒尺寸分布均匀。

W2O5 thin films were prepared by inorganic sol-gel method from V2O5 （AR） on Si substrates and glass substrates heated in air. VO2 thin films with a preferred orientation were prepared by vacuum annealing process with V2O5 thin films at different temperatures. Its preparation process and microstructure were studied. The results show that the better vacuum annealing process of thin films on both glass and Si substrates are 480 ℃/2 h. The VO2 thin films has a preferred orientation along with 〈110〉 directions, surface morphology of VO2 thin films are quit smooth, the sizes and distribution of VO2 particles are uniform.