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Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction

Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction
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摘要 We study theoretically the interracial electronic property of a heterojunction made from two Mott insulators (MI) with different magnetic structures. By means of unrestricted Hartree-Fock calculations in real space, we find that a charge dipole can form spontaneously near the interface of the MI/MI heterojunction. The magnitude of this charge dipole depends strongly on the magnetic states of both sides of the heterojunction. Combining with the result from an exactly solvable two-site toy model, we argue that the interface dipole arises from exchange effects as well as its asymmetry intrinsic to the heterojunction near the interface. Our study may shed light on the fabrication of ultrathin ferroelectric and magnetoelectric devices. We study theoretically the interracial electronic property of a heterojunction made from two Mott insulators (MI) with different magnetic structures. By means of unrestricted Hartree-Fock calculations in real space, we find that a charge dipole can form spontaneously near the interface of the MI/MI heterojunction. The magnitude of this charge dipole depends strongly on the magnetic states of both sides of the heterojunction. Combining with the result from an exactly solvable two-site toy model, we argue that the interface dipole arises from exchange effects as well as its asymmetry intrinsic to the heterojunction near the interface. Our study may shed light on the fabrication of ultrathin ferroelectric and magnetoelectric devices.
作者 郝雷 汪军
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第11期4305-4311,共7页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant Nos 10574021, 90403011, and 10704016)
关键词 Mott insulator heterojunction interface dipole asymmetric exchange Mott insulator heterojunction, interface dipole, asymmetric exchange
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