期刊文献+

国产4H-SiC SI衬底MESFET外延生长及器件研制 被引量:2

Device Development and MESFET Epitaxy Growth on Domestic 4H-SiC SI Substrate
下载PDF
导出
摘要 以国产衬底实现SiC加工工艺链为目标,采用国产4H-SiC半绝缘衬底材料外延得到4H-SiC MESFET结构材料。外延片XRD半宽43.2 arcs,方块电阻121点均匀性18.39%,随后制备出的具有直流特性的4H-SiC MESFET器件管芯,器件总栅宽250μm,饱和电流密度680 mA/mm,跨导约为20 mS/mm,在20 V下的栅漏截止漏电为10μA,2 mA下栅漏击穿电压为80 V。比例占总数的70%以上。初步实现从衬底到外延,进而实现器件的完整工艺链,为进一步的工艺循环打下良好基础。 In order to make the SiC process circle from substrate to device all by domestic materials, MESFET was grown on domestic SI dH-SiC substrate with vanadium doped. The XRD FWHM of the epilayer was 43.2 arcs. The uniformity of 121-dot sheet resistance mapping is 18.39% (standard deviation). Then it was used in making MESFET devices. The gate-width is 250 μm. Idss is 680 mA/mm. The gm is about 20 mS/mm. The breakdown voltages between gate and drain are 20 V and 80 V at leak current 10 μA and 2 mA, respectively. The rate of final devices that passed DC test is more than 70%. The work is the beginning for making the process line of substrate, epitaxy and devices into succeed. It will be the start point for the next work.
出处 《半导体技术》 CAS CSCD 北大核心 2008年第11期1007-1010,共4页 Semiconductor Technology
关键词 4H-SIC 半绝缘衬底 金属肖特基场效应晶体管 外延 微波 功率器件 4H-SiC SI substrate MESFET epitaxy microwave power device
  • 相关文献

参考文献7

  • 1MILLIGAN J W, ALLEN S T, SUMAKERIS J J, et al. Transition of high power SiC MESFETs from 2-inch to 3-inch production for improved cost and producibility [D]. Scottsdale Az: GaAs MANTECH Conference Digest of Papers,2003.
  • 2BERTILSSON K. Simulation and optimization of SiC field effect transistors [ D]. Stockholm : KTH Microelectronics and Information Technology, 2004.
  • 3ZPINECI B O,TOLBERT L M. Comparison of wide-bandgap semiconductors for power electronics applications [R]. Tennessee: Oak Ridge National Laboratory, 2003.
  • 4潘宏菽,李亮,王同祥.瓦级输出功率的4H-SiCMESFET研制[C]∥ICChina2005论文集.北京,中国,2005:230-233.
  • 5李亮,潘宏菽,王同祥.微波功率SiCMESFET研制[C]∥第十四届全国半导体集成电路、硅材料学术会议论文集.珠海,中国,2005:413-416.
  • 6陈刚,钱伟,陈斌,等.1-mmSiC多指栅微波功率器件研究[C]∥第十四届全国半导体集成电路、硅材料学术会议论文集.珠海,中国,2005:382.384.
  • 7蔡树军,潘宏菽,陈昊,李亮,赵正平.S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate[J].Journal of Semiconductors,2006,27(2):266-269. 被引量:5

二级参考文献2

  • 1Allen S T,Pribble W L,Sadler R A,et al.Progress in high power SiC microwave MESFETS.IEEE MTT-S Digest,1999:321
  • 2Palmour J W,Allen S T,Sheppard S T,et al.Progress in SiC and GaN microwave devices fabricated on semi-insulating 4HSiC substrate.57th Annual Device Research Conference,1999:38

共引文献5

同被引文献16

  • 1潘宏菽,李亮,王同祥.瓦级输出功率的4H-SiCMESFET研制[C]∥ICChina2005论文集.北京,中国,2005:230-233.
  • 2SADLER R A, ALLEN S T, PRIBBLE W L, et al. SiC MES- FET hybrid amplifier with 30 W output power at 10 GHz [C] // Proceedings of 2000 IEEE/Cornell Conference on High PerformanceDevices. Ithaca, NY, UAS, 2000, 173-177.
  • 3SRIRAM S, HAGLEITNER H, NAMISHIA D, et al. Highgain SiC MESFETs using source-connected field plates [J]. IEEE Electron Device Letter, 2009, 30 (9) : 952- 953.
  • 4CHEN H, MO J H, LI L, et al. 250 W S-band 4H-SiC MESFET [C]. // Procecdings of Microwave Conference. Macao, China, 2008; 1-4.
  • 5JOHNSTON A. Reliability and radiation effects in compound semiconductors [M].NEW JERSEY, USA: World Scien- tific Publishing Co. Pte. lad. , 2010: 132- 135.
  • 6田爱华,赵彤,潘宏菽,陈昊,李亮,霍玉柱.n型4H-SiC同质外延层上欧姆接触的研究[J].半导体技术,2007,32(10):867-870. 被引量:3
  • 7潘宏菽,李亮,陈昊,齐国虎,霍玉柱,杨霏,冯震,蔡树军.S波段10W SiC MESFET的研制[J].半导体技术,2007,32(11):940-943. 被引量:11
  • 8杨霏,陈昊,潘宏菽,默江辉,商庆杰,李亮,闫锐,冯震,杨克武,蔡树军,姚素英.等平面化SiC MESFET的研制[J].微纳电子技术,2008,45(8):440-443. 被引量:2
  • 9商庆杰,潘宏菽,陈昊,李亮,杨霏,霍玉柱.SiC MESFET工艺在片检测技术[J].半导体技术,2008,33(12):1095-1099. 被引量:1
  • 10柏松,陈刚,吴鹏,李哲洋,郑惟彬,钱峰.微波大功率SiC MESFET及MMIC[J].中国电子科学研究院学报,2009,4(2):137-139. 被引量:5

引证文献2

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部