摘要
InSb由于硬度低、脆性大等特性,其材料表面的精密加工水平成为制约器件性能进一步提高的重要因素。采用化学机械抛光(CMP)技术对InSb进行表面加工,分析了CMP过程中抛光液的磨料质量分数和氧化剂含量对InSb的CMP效果的影响规律,实验研究了磨料和氧化剂(H2O2)的优化配比参数,并在此参数下,获得了良好的抛光表面。
As InSb is with low hardness and great brittleness, to improve the performance of the device is restricted by the surface processing of the InSb. CMP technology was used for InSb surface treatment, and the influence of the abrasive concentration and oxidizer （H2O2） content on the surface rough and material remove rate in InSb CMP were studied. Experiments were done to optimize the proportional parameters of the abrasive and H2O2. Also the low surface roughness after the InSb CMP was obtained
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第11期1016-1019,共4页
Semiconductor Technology
基金
国家自然科学基金(10676008)
高等学校博士学科点专项科研基金(20050080007)
河北省重点学科冀教高(2001-18)
