摘要
对In0.53Ga0.47As/InP雪崩光电二极管(APD)探测器进行了特性分析。以大阵列研究为基础,结合器件特性设计了一个2×8低噪声读出电路(ROIC),电路主要由电容反馈互阻放大器(CTIA)和相关双采样(CDS)电路单元构成,并对读出电路的时序、积分电容等进行了设计。电路采用0.6μm CMOS工艺流片,芯片面积为2 mm×2 mm,电荷存储能力为5×107个,功耗小,噪声低,设计达到预期要求。
An approach benefits design of readout integrate circuit （ROIC） for the In0.53 Ga0.47 As/InP avalanche photodiodes （APD） detector was proposed. As a key step in incremental effort to construct large format IR arrays, a 2 × 8 ROIC was designed which mainly contains the capacitor feedback transimpedance amplifier （CTIA） and correlated double sampling （CDS） structure. The circuit was fabricated by 0.6 μm CMOS technology. The size of ROIC is 2 mm × 2 mm, and the charge storage capacity is 5 × 10^7. The results indicate the ROIC has high capability and low noise performance as expected.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第11期1041-1043,共3页
Semiconductor Technology
基金
科技部重大项目资助(2006CB932802)
南通大学自然科学项目资助(07Z039)
