碳纳米管阵列栅极冷阴极场发射增强因子的计算

Calculation of field enhancement facter of the carbon nanotube array with normal-gated of cold cathode

垂直于栅极冷阴极六角排列的碳纳米管(CNTs)阵列是最具有应用前景的CNTs场发射平面显示器结构。计算了该结构尖端及侧壁的电势和电场分布以及场增强因子。计算结果表明:CNTs尖端处电场强度很大,随着半径r的增加,电场强度急剧减小;CNTs长径比L/r越大,尖端电场越强;栅孔半径R越大,CNTs顶端电场强度越小。

The structure of carbon nanotubes （CNTs） array with hexagon pitch arrangement on the normal-gated of cold cathode perpendicularly have most foreground applications, always be used to the carbon nanotube field emission display （CNT-FED）. This paper calculate the tip and parietal electric field and enhancement facter. The calculated results indicate that the electric field strength is very strongly near the top of the CNTs, and drops abruptly with the increasing of the radius; higher aspect ratio of the carbon nanotube leads to stronger field at the apex;the electric field intensity of the carbon nanotube top is very weakly as the region of a larger gate-anode distance.