ZnO基半导体的研究进展——点缺陷、掺杂及接触

Advances in Research on ZnO-base Semiconductor——Point Defect,Doping and Contact

ZnO以其优异的特性正在世界范围内再次掀起新的研究热潮。简要综述了近年来在ZnO点缺陷、掺杂、接触等方面的研究进展。目前,ZnO施主缺陷得到进一步研究和鉴别,p型转变已经初步实现,ZnO与金属的接触也得到了研究和改进,但仍存在许多极富挑战性的课题,有待于从掺杂机理、缺陷化学、材料设计及其制备技术等方面进一步地创新与研究。

ZnO has received much attention again worldwide because of its excellent properties. In this paper, a review is given brief here on recent results in research development of point defect, doping, and contact for ZnO. At present, the donor defect of ZnO has been further investigated and identified, p-type ZnO has been preliminarily carried out and the contact between ZnO and metal has also been studied and ameliorated. However, there are many challenges yet which should be further innovated and researched with respect to its doping elements, defect chemistry, material design, fabrication technique etc.