摘要
用直流磁控溅射的方法在Si及Mo基片上制取Ti及其Ti合金薄膜。研究了基片温度等镀膜工艺参数对薄膜性能的影响,并用XPS、XRD、SEM分析薄膜的化学组成和结构特征,对薄膜的生长模式进行分析。结果表明,合金的加入降低了晶粒尺寸;升高温度可增大薄膜晶粒尺寸,改善薄膜结合能力;合金膜的成分与靶材基本一致。
Ti and Ti-alloy films were deposited on Si （100） and Mo substrate by direct current（DC） magnetron sputtering method. The influences of substrate temperature and others on the film properties were discussed. The composition properties of the films were studied by XPS technique. The structures of the films were obtained using XRD and SEM techniques, and the growth model was also investigated. It is found that the grain size of the Ti-alloy films is smaller than that of pure Ti films; with increase in temperature, the grain size and adhesion of films are both increased; the composition of the films is uniform from the target.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2008年第10期933-937,共5页
Atomic Energy Science and Technology
基金
国家自然科学基金资助项目(50471078)
关键词
钛
薄膜制备
磁控溅射
titanium
thin film preparation
magnetron sputtering
