磁控溅射法制备金/钆柱腔工艺研究

Fabrication Technique of Au/Gd Hohlraum by Magnetron Sputtering

采用直流磁控溅射方法制备金/钆(Au/Gd)多层膜,并研究不同制备参数对多层膜结构与性能的影响。溅射压强高于1Pa时,Au膜与Gd膜的沉积速率均随溅射压强的增大而下降;在较低溅射气压下,随着溅射气压的降低,金膜与钆膜的均方根粗糙度有所减小;随着溅射功率的减小,金/钆多层膜的周期性结构变好,界面更为清晰。本工作制备了不同原子比的金/钆膜柱腔,探讨了有关柱腔成型的解决方法。

The Au/Gd multilayer films were prepared by magnetron sputtering. The effects of the technique parameters on the structure and properties of Au/Gd multilayer films were studied. The results show that the deposition rates of Au and Gd films decrease with increase of the sputtering pressure. At low pressure, the RMS roughnesses of Au and Gd films decrease with decrease of the sputtering pressure. The period structures of Au/Gd multilayer films are clearer at lower sputtering power. Based on the preparations of Au/Gd multilayer films, the Au/Gd hohlraum were fabricated. The effects of Au/Gd ratio on the mechanical properties of the Au/Gd hohlraum were investigated.