摘要
在不同电沉积条件下形成CdSe薄膜,并测定它们的化学计量组成、掺杂浓度和少子扩散长度,研究了电沉积条件对薄膜光电性能的影响。发现在0.1mol/1 CdSO_4+4mmol/1 H_2SeO_3+0.2mol/1 H_2SO_4溶液中、于-0.685V(vs,SCE)下得到的CdSe薄膜具有较高的光电转换效率;提高镀液中H_2SeO_3的浓度会使沉积层中的Se过量。利用扫描电镜的EDAX测量微区组成,讨论了过量Se或Cd对薄膜光电性能的影响。根据光吸收量和光电池等效串联电阻两个因素分析沉积层厚度的最佳选择.
The CdSe films were formed under different electrodeposition conditions, and their stoichiometric components, donor densities and minority-carrier diffusion lengths were measured. Thereby the effects of deposition conditions on photoelectric properties of the films were studied. It was found that the CdSe film deposited at-0.685V (vs. SCE) in 0.1mol/1 CdSO_4+4 mmol/1 H_2SeO_3+0.2 mol/1 H_2SO_4 solution has higher photoelectric conversion efficiency. Increase of H_2SeO_3 concentration will cause the deposited layer to contain excess Se. Analysis of spot constituents with EDAX of scanning electron microscope showed that the deposited layers are non-uniform, and the effects of excess Se or Cd on the photoelectric properties were discussed. The optimum thickness of CdSe film was also considered in terms of light absorption amount and series resistance of photocell.
基金
国家自然科学基金
