Xe^23＋离子辐照Al 2O 3的光谱特性

Photoluminescence Character of Xe Ion Irradiated Sapphire

本工作研究460 keV、3 MeV和308 MeV Xe^23＋辐照Al2O3单晶样品的光致发光特性。从经过460 keV Xe^23＋辐照后样品的光致发光测试结果可看到,波长为380、413和450 nm的发光峰明显增强,在390和564 nm处出现了新的发光峰。从3 MeV的Xe^23＋辐照后样品谱的变化可看到,在较低剂量条件下,516 nm（2.4 eV）和564 nm（2.2 eV）处的发光峰随辐照剂量增加而增强,且当剂量增到1×10^16cm^-2时,564 nm处的发光峰消失,只有516 nm（2.4 eV）处的发光峰较强。从308 MeV Xe23＋辐照后样品的光致发光谱中可看到,357 nm（3.47 eV）和516 nm（2.4 eV）处的发光峰随着剂量增加明显增强。辐照后样品的FTIR谱显示：波数在460-510 cm^-1和630 cm^-1附近的吸收是Al2O3振动模式,经离子辐照后,吸收带展宽;1 000-1 300 cm^-1间为Al—O—Al桥氧键的伸缩振动模式,高能辐照后的吸收带向低波数方向移动。

The photoluminescence （PL） character of sapphire irradiated with 460 keV, 3 MeV and 308 MeV Xe ions were studied. The PL measurements show that the absorption peaks located at 380, 413, and 450 nm are increased, and new peaks are appeared at 390 and 564 nm in irradiated samples with 460 keV Xe ions. The PL measurements also show that the absorption peaks located at 516 and 564 nm appear in irradiated samples with 3 MeV Xe ions, and when the Xe ions fluency is increased to 1 × 10^-6 cm^-2, the peak at 564 nm is disappeared. The PL measurements show that the absorption peaks are appeared at 357 and 516 nm for the irradiated samples with 308 MeV Xe ions, and the peak become more and more strong with increase of Xe ions fluencies. Infrared spectra show a broadening of the absorption band between 460 cm^-1 and 630 cm^-1indicating strongly damaged regions formed in the Al2 O3 samples and position shift of the absorption band in 1 000-1 300 cm^-1 towards to low wavenumber.