半导体桥点火模型的建立及数值模拟

Establishment of Semiconductor Bridge Ignition Model and Its Numerical Simulation

通过对半导体桥点火电路输入能量的分析,基于半导体物理学理论和非傅里叶热传导理论,认为半导体桥在输入能量大于能量临界值(E)时为等离子体点火。建立了相应的数学物理模型,采用数值分析理论对模型进行分析,得到输入能量、颗粒半径、等离子体温度等因素对点火延迟时间的影响分布曲线,这些相关的曲线分布规律证明模型建立的可行性与合理性。

Through analysis of input energy of the semiconductor bridge ignition circuit, considering that when the input energy is bigger than critical energy E , the ignition of the semiconductor bridge is the plasma ignition based on the physics of semiconductor and the non-Fourier heat conduction theory. The mathematic physical model was established and analyzed using the numerical analysis method. The distribution curves affecting the ignition delay time by the input energy, pellet radius, plasma temperature are obtained. The curves show the feasibility and the rationality of the established model.