摘要
Room-temperature deposited amorphous silicon nitride （a-SiNx ：H） films exhibit intense green light emission after post-treated by plasma oxidation, thermal oxidation and natural oxidation, respectively. All the photoluminescence （PL） spectra are peaked at around 500nm, independent of oxidation method and excitation wavelength. Compared with the PL results from oxidized a-Si：H and as-deposited a-SiNx：H samples, it is indicated that not only oxygen but also nitrogen is of an important role in enhancing light emission from the oxidized a-SiNx：H. Combining the PL results with the analyses of the bonding configurations as well as chemical compositions of the films, the strong green light emission is suggested to be from radiative recombination in luminescent centres related to N Si-O bonds.
Room-temperature deposited amorphous silicon nitride （a-SiNx ：H） films exhibit intense green light emission after post-treated by plasma oxidation, thermal oxidation and natural oxidation, respectively. All the photoluminescence （PL） spectra are peaked at around 500nm, independent of oxidation method and excitation wavelength. Compared with the PL results from oxidized a-Si：H and as-deposited a-SiNx：H samples, it is indicated that not only oxygen but also nitrogen is of an important role in enhancing light emission from the oxidized a-SiNx：H. Combining the PL results with the analyses of the bonding configurations as well as chemical compositions of the films, the strong green light emission is suggested to be from radiative recombination in luminescent centres related to N Si-O bonds.
基金
Supported by the State Key Programme for Basic Research of China under Grant Nos 2006CB932202 and 2007CB613401, and the National Natural Science Foundation of China under Grant Nos 90301009, 60508009, and 60571008.
