摘要
介绍了利用MMT等离子体氮化工艺和炉管NO退火氮化工艺制备的超薄栅介质膜的电学特性和可靠性.结合两种氮化工艺在栅介质膜中形成了双峰和单峰的氮分布.通过漏极电流、沟道载流子和TDDB的测试,发现栅介质膜中双峰的氮分布可以有效提高器件的电学特性,更为重要的是可以极大提高器件的击穿特性.这指明了延长掺氮氧化膜在超大规模集成电路器件栅介质层中应用的寿命,使之有可能进一步跟上技术的发展.
MMT （modified magnetron typed） plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs （metal-oxide-semiconductor field effect transistors）. Dual-peak and single-peak N distributions are formed after nitridation. The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility, and TDDB characteristics. The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated （ULSI） technology.
