摘要
针对VBIC(vertical bipolar inter-company)模型对HBT多电压偏置下S参数拟合不够准确的问题,考虑了GaAs基HBT集电区载流子速度和耗尽层宽度随电压的变化关系,建立了随外加电压变化的集电区渡越时间方程.将得到的渡越时间方程内嵌到VBIC模型中,改进的模型提高了GaAs基HBT多电压偏置下S参数的拟合精度,其在很宽的电压范围内均与实际测试结果符合良好.
The voltage-dependent carrier velocity and the depletion-layer thickness in the collector of a GaAs-based HBT have been investigated. The formulation of the voltage-dependent collector transit time has been established. An improved vertical bipolar intercompany （VBIC） model with the collector transit time has been developed. The model more accurately predicts S-parameters over a wide range of the bias voltage than the VBIC model.
基金
国家重点基础研究发展规划资助项目(批准号:2002CB311902)~~
