摘要
简单地介绍了结终端技术与功率器件的击穿电压的关系及影响器件击穿电压的因素和功率器件的设计中经常使用的各种结终端技术。提出了带有抗反型层的全场板终端结构,阐述了它的基本原理,并利用M ed ic i软件对其击穿特性进行了模拟.给出了模拟结果.
The relation between junction terminal technology and the breakdown voltage of the power device, the factors affecting the breakdown voltage, the common junction terminal technologies in power device design have been briefly introduced in this paper. A whole field plate junction termination structure with an anti - inversion layer is presented. The principle of new junction termination technique is elaborated. The new structure is simulated and analyzed with Medici software. Given result of the simulated.
出处
《辽宁大学学报（自然科学版）》
CAS
2008年第4期302-306,共5页
Journal of Liaoning University：Natural Sciences Edition
基金
沈阳市科技局(1071115-1-00)
关键词
结终端技术
抗反型层
场板
anti-inversion layer
field plate
junction termination technique
