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离子束溅射法制备碳氮薄膜及其结构表征 被引量:1

Structure Characterization and Preparation of Carbon Nitride Film Using Ion Beam Sputtering Technique
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摘要 采用离子束溅射沉积技术,对不同氮离子束能量情况下制备的氮化碳薄膜,进行了拉曼(Raman)和红外光谱(FT-IR)分析,并采用透射电子显微镜(TEM)分析其表面形貌,研究所制备薄膜的化学组成和键合结构。结果显示:随着氮离子束能量增大,氮碳薄膜的沉积速率减小,薄膜结构中sp2含量增大,薄膜有序度增加,另外薄膜结构的团簇尺寸大幅下降,团簇趋于均匀分布。 The carbonate nitride films were prepared by the ion beam sputtering deposition technology. The carbonate nitride films prepared in different nitrogen ion beam energy conditions were analyzed by means of raman spectra and FT-IR spectra. The films surface morpholoy, chemical compositions and bonding states were studied by TEM. The results show that with the increase of nitrogen ion beam energy, the deposition rate decresaes and sp^2 content rises up, moreover the size of cluster decreses in structure, the clusters become more uniform.
出处 《高分子材料科学与工程》 EI CAS CSCD 北大核心 2008年第11期172-175,共4页 Polymer Materials Science & Engineering
关键词 氮化碳 离子束溅射 薄膜 晶体表征 carbonate nitride ion beam sputtering technique films crystal characterization
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  • 1ALVAREZ H P. Thin Solid Films, 2001, 398-399:116- 123.
  • 2KAMATSU T, SAMEJIMA M. J. Mater. Chem., 1998, 8 (1): 193-196.
  • 3MARTIN G J, MARTIN G F J, MORAN E, et al. Thin Solid Films, 1999, 341: 94-100.
  • 4RODIL S E, BEYER W, ROBERTSON J, et al.Diamond Related Materials, 2003, 12: 921-926.
  • 5TAUC J, GRIGOROVICI R A. Phys. Status Solidi, 1966, 15: 627-629.
  • 6ZHENG W T, SJOSTROM H, IVANOV I, et al. J. Vac. Sci. Technol., 1996, A14: 2696-2701.
  • 7CAR R, PARRINELLO M. Phys. Rev. Lett., 1985,5 (5) : 24-71.
  • 8SHAM L. Density Functional Theory and Computational Materials Physics. CHELIKOWSKY J R, LOUIE S G, Ed. Quantum Theory of Real Materials. Kluwer Academic Publishers, 1996: 13.

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  • 2Liu A Y, Cohen M L. Prediction of new low compressi-bility solid [J]. Science, 1989,245 : 841-842.
  • 3Liu A Y, Cohen M L. Structural properties and elec-tronic Structure of low-compressibility material (3—-S13 N4 andp—C3N4[J]. Phys Rev, 1990,B41: 10727-10734.
  • 4Satoshi Kobayashi,Shinji Nozaki,Hiroshi Morisaki, etal. Carbon nitride thin films deposited by the reactive ionbeam sputtering technique[J]. Thin Solid Films, 1996 , 281-282,289-293.
  • 5Zhou Z B, Cui R Q,Pang Q J ’ et al. Schottky solarcells with amorphous carbon nitride thin films prepared byion beam sputtering technique[J], Solar Energy MaterialsSolar Cells* 2002,70: 487-493.
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