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像增强器高速选通脉冲形成电路的设计与实现 被引量:5

Design and implementation of a high-speed gate pulse generator for image intensifier
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摘要 为像增强器的高速选通提供了纳秒级宽度的高压电脉冲电路的设计与实现。根据实际像增强器的结构特点,以功率型场效应管为核心器件,研究了获得理想开关速度的关键技术,设计了一种可靠的高压高速脉冲形成电路,并对其进行了Spice仿真,最终的电路实现了将脉冲后沿由20 ns加快到5 ns。 Nanosecond-scale pulsing is required for driving high-speed gated image intensifier. Based on the structure of the actual image intensifier, a reliable high-voltage pulse generator was designed, simulated and implemented. Power MOSFET was utilized as the key component in the circuit, and some techniques to guarantee the optimal switching speed were developed as well. An improvement of switching speed from 20 ns down to 5 ns was achieved.
出处 《电光与控制》 北大核心 2008年第12期72-74,88,共4页 Electronics Optics & Control
关键词 像增强器 选通 高压 高速脉冲 image intensifier gating high voltage high-speed pulse
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参考文献5

  • 1BAKER R J, JOHNSON B P. A 500 V nanosecond pulse generator using cascode-connected power MOSFETs [ J ]. Meas Sci Technol, 1992 (3) :775-777.
  • 2SrMicmelectmnics. IRF740 [ EB/OL]. Datasheet [2006-06-30 ]. http ://www. st. com.
  • 3HARRIS Semiconductor. IRb310 [ EB/OL ]. Datasheet [ 1998- 08-27]. http :www. harris, com.
  • 4ON Semiconductor. MC33151, high speed dual MOSFET gate driver [ EB/OL ]. Datisheet [ 2004-07-07 ]. http :// www. onsemi, com.
  • 5BARKHORDARIAN V. PowerMOSFET Basics [ Z ]. International Rectifier, Application Note AN-1084,1997.

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