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高压放电速断装置的研制 被引量:1

Development of High Voltage Discharge Quick Break Equipment
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摘要 串补工程中密封间隙等设备的放电电压准确性至关重要。为了确保试品多次试验的放电环境基本相同,要求每次试验放电的时间力求最短。该文给出了变压器和谐振升压器2种高压放电试验装置的原理以及改进方案,通过检测主回路电流大小判断间隙是否被击穿,由单片机发出相应控制信号,采用IGBT等开关器件控制试验电压的通断,保证了试品每次试验只进行一次放电,介绍了保护电路的原理,给出了试验波形,证明了此高压放电速断装置的可行性。 The discharge voltage of some equipment like trigatron spark gap and so on in series compensation project is extremely important. To make sure that every time the discharge environment of the sample is almost the same, every time the discharge time should be as short as possible. This paper gives out the principles and improving schemes of transformer discharge equipment and resonance booster discharge equipment. By detecting the current in the main circuit, the gap's breaking-down can be identified, and the single chip micro-computer will send out corresponding control signal to make the IGBTs to switch off or cut off the input voltage, by this mean, we can make sure that every time of the experiment, the sample will discharge only once. The paper also introduces the principle of the protection circuit. At last, the experimental waveforms were listed, which prove the feasibility of the high voltage discharge fast switch-off device.
出处 《电网技术》 EI CSCD 北大核心 2008年第22期95-97,102,共4页 Power System Technology
关键词 间隙 高压放电 绝缘栅双极型功率管 单片机 速断装置 spark gap high voltage discharge IGBT single chip micro-computer fast switch-off device
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  • 1贺臣,何孟兵,李劲.高陡度场畸变开关触发系统的研制[J].高电压技术,2004,30(7):43-45. 被引量:11
  • 2赵军平,章林文,李劲.基于MOSFET的固体开关技术实验研究[J].强激光与粒子束,2004,16(11):1481-1484. 被引量:28
  • 3刘平,王洋,张悦英.单电感E^2类软开关DC/DC变换器[J].电力电子技术,2006,40(3):55-56. 被引量:1
  • 4史平君.绝缘栅双极晶体管(IGBT)的驱动与保护[J].火控雷达技术,1996,25(3):26-31. 被引量:8
  • 5Richardson R,Rush R J,Iskander M,et al.Compact 12.5 MW,55 kV solid state modulator[C].Digest of Technical Papers Pulsed Power Plasma Science 2001.Las Vegas Nevada,USA:IEEE,2001:636-639.
  • 6Busatto G,Cascone B,Fratelli L,et al.Series connection of IGBTs in hard-switching applications[C].Conference Record of 1998 IEEE Industry Applications Conference:Thirty-Third IAS Annual Meeting.St.Louis,MO,USA:IEEE,1998:825-830.
  • 7Gaudreau M P J,Casey J,Hawkey T J,et al.Solid-state modulators for plasma immersion ion implantation applications[J].Journal of Vacuum Science & Technology B:Microelectronics and Nanometer Structures,1999,17(2):888-894.
  • 8Kirbie H,Caporaso G,Goerz D,et al.MHz repetition rate solid-state driver for high current induction accelerators[C].Proceedings of the IEEE Particle Accelerator Conference.New York,USA:IEEE,1999:625-627.
  • 9Maulat O,Roche M,Pelletier J,et al.New line of high voltage high current pulse generators for plasma-based ion implantation[J].Journal of Vacuum Science & Technology B:Microelectronics and Nanometer Structures,1999,17(2):879-882.
  • 10Ghasemi Z,MacGregor S J,Dick A R,et al.Fast high-voltage,high-current switching using stacked IGBTs[C].Pulsed Power 2001,IEE Symposium.London,UK:IEE,2001:1-5.

共引文献50

同被引文献19

  • 1李正国,罗安,马国喜.大功率静止同步补偿装置IGBT模块吸收保护电路参数的多目标优化设计[J].电网技术,2004,28(13):40-44. 被引量:8
  • 2梅军,郑建勇,胡敏强,柴继涛,吴恒荣.基于IGBT软关断的混合式限流断路器结构与分析[J].电力系统自动化,2004,28(18):59-62. 被引量:46
  • 3BEAUSEJOUR Y, KARADY G. Valve damping circuit design for HVDC systems[J]. IEEE Trans on Power Apparatus and Systems, 1973, PAS-92(5): 1615 1621.
  • 4CARMINE A, GIOVANNI B, FRANCESCO I. High voltage, high performance switch using series connected IGBTs[J]. IEEE Trans on Power Electronics, 2010, 25(9) : 2450-2459.
  • 5PALMER P R, RAJAMANI H S. Active voltage control of IGBTs for high power applications[J]. IEEE Trans on Power Electronics, 2004, 19(4): 894-901.
  • 6SHAMMAS N Y A, WITHANAGE R, CHAMUND D. Review of series and parallel connection of IGBTs[J]. IEE Proceedings of Circuit, Devices and Systems, 2006, 153 (1) : 34-39.
  • 7PALMER P R, GITHIARI A N. The series connection of IGBTs with optimized voltage sharing in the switching transient[C]// Power Electronics Specialists Conference, June 18-22, 1995, Atlanta, GA, USA.
  • 8SASAGAWA K, ABE Y, MATSUSE K. Voltage balancing method for IGBTs connected in series[C]// Conference Record of the 2002 IEEE Industry Applications Conference & 37th IAS Annual Meeting, October 13-18, 2002, Pittsburgh, PA,USA: 2597 2602.
  • 9富士电机株式会社.富士IGBT模块应用手册EEB/OL].[2011-09 13 ]. http://www, fujielectric, on/products/ semiconductor/technical/application/pdf/RCH984 b/ RCH984b.pdf.
  • 10金其龙,孙鹞鸿,严萍,张东东,欧阳文敏.IGBT串联技术动态均压电路的研究[J].高电压技术,2009,35(1):176-180. 被引量:33

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