摘要
以白炽灯为光源照射单晶硅光电池,测量在硅光电池前加不同截止波长的滤色片时的短路电流.通过短路电流和截止波长的关系,经拟合得到单晶硅材料的长波限,再利用半导体材料的长波限与半导体的禁带宽度Eg的关系,即Eg=hc/λ,计算得出其禁带宽度.
The crystalline silicon photocell is illuminated by an incandescent lamp, and the shortcircuit current of the photocell is detected when filters of different cut-off wavelength are put in front of it. Consequently, the long wavelength limit via the relation between short-circuit current and cut- off wavelength is calculated, then the band gap of silicon （1.13 eV） is given according to the equation Eg =hc/λ.
出处
《物理实验》
2008年第11期6-8,共3页
Physics Experimentation
关键词
硅光电池
短路电流
截止波长
禁带宽度
silicon photocell
short-circuit current
cut-off wavelength
band gap
