摘要
为改善传统EEPROM在可编程模拟电路应用中的不足,提出了一种新型的单层多晶EEPROM单元结构,与常见的单层多晶EEPROM结构相比,该结构采用双N阱、附加栅结构实现,与标准数字CMOS工艺兼容,具有写入电流控制准确、阈值电压低的特点.通过对器件的分析及仿真,验证了该结构在模拟电路应用中的有效性.
In order to improve the good behavior of the EEPROM applications in programmable analog circuit.A new structure for reducing the threshold voltage and controlling the charge of floating-gate is proposed,the device has two control gates and an additional gate,which is comp-atible with standard CMOS processes,it is shown that the device is valid for configuring operation point of floating-gate Transistor in programmable analog circuit.
出处
《微电子学与计算机》
CSCD
北大核心
2008年第11期105-108,共4页
Microelectronics & Computer
