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氮化锡负极薄膜的制备与性能研究

Preparation and property study of the tin nitride negative electrode thin film
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摘要 氮化锡是一种新型薄膜锂电池负极材料,采用射频反应磁控溅射法制备氮化锡负极薄膜,系统研究了反应溅射功率和气流比对氮化锡薄膜结构的影响,并对其充放电性能进行了研究。实验结果表明,在溅射功率75W,N2/(N2+Ar)流量比0.5的条件下所制备氮化锡薄膜结晶度较好,表面致密具有良好的电性能,首次充放电效率超过60%,50次循环后放电比容量仍保持250mAh/g。 Tin nitride is a new kind of the negative electrode materials used for thin film lithium batteries. The tin nitride thin film was obtained by radio-frequency reactive magnetron sputtering methods. The influence of varying radio-frequency power and reactive gas composition on the structure of the tin nitride thin films was wholly investigated and the electrochemical performance of the films were also studied. The experiment results show that the tin nitride thin films prepared at RF power 75 W, N2/(N2+Ar) ratio 0.5, has high degree of crystallinity. And the tin nitride thin films has a compact surface and good electrochemistry performance: the first charge-discharge efficiency is over 60% and the specific discharge capacity for 50 cycles is 250 mAh/g.
出处 《电源技术》 CAS CSCD 北大核心 2008年第11期742-744,747,共4页 Chinese Journal of Power Sources
关键词 薄膜锂电池 氮化锡 负极 反应溅射 thin film lithium battery tin nitride negative electrode reactive sputtering
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参考文献7

  • 1PARK Y J, KIM J G, KIM M K, et al. Fabrication of LiMn2O4 thin films by sol-gel method for cathode materials of microbattery [J]. Journal of Power Sources, 1998,76: 41-47.
  • 2PARK K S, PARK Y J, KIM M K, et al. Characteristics of tin nitride thin-film negative electrode for thin-film microbattery[J]. Journal of Power Sources, 2001,103 : 67-71.
  • 3BATES J B, DUDNEY N J,NEUDECKER B, et al.Thin-film lithium and lithium-ion battery[J]. Solid State Ionics, 2000,135 : 33-45.
  • 4MARUYAMA T, MORISHITA T.Copper nitride and tin nitride thin films for write-once optical recording media [J]. Applied Physical Letters, 1996,69 : 890-891.
  • 5LIMA R S, DIONISIO P H, SCHREINER W H.Magnetron sputtered tin nitride[J]. Solid State Communications, 1991,79: 395-398.
  • 6MARUYAMA T, MORISHITA T. Tin nitride thin films prepared by radio-fi-equency reactive sputtering [J]. Journal of Applied Physics, 1995,77 : 6641-6645.
  • 7INOUE Y, NOMIYA M, TAKAI O. Physical properties of reactive sputtered tin-nitride thin films[J]. Vacuum, 1998,51:673-676.

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