摘要
采用V2O5粉末为原料、苯甲醇、异丁醇为溶剂,通过溶胶-凝胶工艺在玻璃衬底上制备了用于非制冷红外探测器件热敏材料的氧化钒薄膜。利用四探针、椭偏仪、XPS等技术,分别测量所制备薄膜的电阻、厚度和化学成分,总结出前驱溶液配比、退火温度、膜厚等因素对薄膜电学性能的影响。结果表明,利用原料配比为V2O5:异丁醇:苯甲醇(mol:mol:mol)=1:40:4的前驱溶液,所制备的厚度为440nm的氧化钒薄膜,并经500℃退火处理,显示出的电学性能最为理想,此时氧化钒薄膜的方阻为52.284kΩ(30℃),TCR为-3.43%/K(30℃)。
A vanadium oxide thin film is deposited on glasses by an organic Sol-gel process for thermo-sensitive material of uncooled IR detectors . Vanadium oxide powder is dissolved into a mixed solution of benzyl alcohol and isobutanol alcohol to obtain a vanadium solution, which is then spin-coated on glass four- substrates followed by an anneal at 500℃. Based on the point probe and XPS technologies, the effects of molar ratio, annealing temperature and film thickness on the electrical properties of vanadium oxide thin film are studied The experiment results show that the electrical properties of vanadium oxide thin film with film thickness of 440nm material matching radio （V2O5： isobutanol alcohol： benzyl alcohol（mol：mol：mol）） of 1：40：4 and anneal temperature of 550℃ are perfect. In this condition, the block resistance value of vanadium oxide thin film is 52.284kΩ（30℃） and TCR is -3.43%/K（30℃）.
出处
《传感器世界》
2008年第11期13-17,共5页
Sensor World
