摘要
采用有限元分析方法对物理气相传输法SiC单晶生长炉内温度场进行研究,采用有限元模拟软件对生长炉内温度分布进行模拟,得到了炉内温度的分布结果.分析了炉内的温度分布规律及对SiC单晶生长速率的影响,提出调节SiC生长温度区域的措施.
Temperature field of SiC single crystal growth furnace is studied using finite element analysis, and numerical simulation software is used to simulate temperature distribution of SiC single crystal growth furnace. The simulated diagram of temperature distribution is obtained. The laws of temperature distribution in the furnace are studied, and the specific methods to regulate the temperature field of silicon carbide growth are put forward.
出处
《重庆工学院学报（自然科学版）》
2008年第11期42-46,共5页
Journal of Chongqing Institute of Technology
关键词
SIC单晶
温度场
有限元分析
SiC single crystal
temperature field
finite element analysis
