摘要
介绍了几种常见的辐照对半导体器件的辐射效应和损伤机制,比较了γ射线、电子、质子以及中子作为辐照源时,光电二极管各项特性参数的变化;根据辐照对半导体的作用原理,解释不同类型辐照引起性能衰减的变化规律;最后,提出了几种抗辐射加固方法,改善光电二极管的抗辐射性能.
This paper introduces the radiation effect and damaging mechanism on semi - conductor device caused by a few familiar radiations. Different performance indexes of photodiode are compared after it has been radiated with γ - radial, electrons, protons and neutrons. According to the function principle of irradiation to semi - conductor, the changing rules of the performance degradation brought by various radiations are explicated. Finally, several methods to improve the radiation hardness of photodiode are proposed.
出处
《嘉兴学院学报》
2008年第6期94-98,共5页
Journal of Jiaxing University
关键词
辐照
半导体器件
抗辐射
radiation
semi - conductor device
radiation resistance