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底电极对BiFeO3薄膜电性质的影响 被引量:3

Effects of Bottom Electrodes on the Electric Properties of BiFeO_3 Films
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摘要 用溶胶-凝胶方法在LaNiO3,ITO和Pt底电极上制备了BiFeO3(BFO)薄膜。薄膜的退火温度为550℃。对不同底电极上的BFO薄膜的结构、形貌、铁电性、介电性和漏电流特性进行了研究。XRD研究表明不同底电极上的BFO薄膜呈不同的取向。所有的薄膜都没有观察到不纯相。剖面扫描电镜研究表明薄膜的厚度为350 nm。铁电性测试表明在128 kV/cm的测试电场下LaNiO3底电极上的薄膜的剩余极化强度最大,为3.31μC/cm2。而ITO和Pt底电极上的BFO薄膜的剩余极化强度分别为2.07μC/cm2与2.76μC/cm2。此外,漏电流的研究表明在ITO底电极上的BFO薄膜的漏电流最小。 BiFeO3 (BFO) films were deposited on LaNiO3, ITO and Pt bottom electrodes by sol-gel process at an annealing temperature 550 ℃. The structural, morphology, dielectric and leakage properties were studied. XRD results indicated that the BFO films on different bottom electrodes adopted different orientation. No impure phases were observed in all films. Cross-section scanning electric microscopy showed that the thickness was 350 nm. Ferroelectricity measuring showed that the film on LaNiO3 bottom electrode has the largest remanent polarizations (Pr) 3.31 μC/cm^2. While the Pr of the BFO films on Pt and ITO bottom electrodes are 2.07 μC/cm^2 and 2.76μC/cm^2 respectively. Leakage current study showed that the film on ITO bottom dectrode has the least leakage current density.
出处 《武汉理工大学学报》 EI CAS CSCD 北大核心 2008年第11期45-49,共5页 Journal of Wuhan University of Technology
基金 湖北省教育厅青年项目(Q200722002)
关键词 BIFEO3薄膜 底电极 铁电性 漏电流 介电性质 BiFeO3 film bottom electrode ferroelectricity leakage current dielectric property
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参考文献18

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同被引文献46

  • 1刘红日.BiFeO_3薄膜的溶胶-凝胶制备及其铁电和介电性质[J].武汉理工大学学报,2007,29(7):66-69. 被引量:4
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  • 8Wang J,Zheng H,Ma Z, et al. Epitaxial BiFeO3 Thin Films on Si[J]. Appl Phys Lett, 2004(85):2574-2576.
  • 9Das R R, Kim D M, Baek S H, et al. Synthesis and Ferroelectric Properties of Epitaxial BiFeO3 Thin Films Grown by Sputtering[J]. Appl Phys Lett,2006(88):2904-1-3.
  • 10Thomas R, Varadan V K. Diffuse Phase Transitions, Electrical Conduction, and Low Temperature Dielectric Properties of Sol-gel Derived Ferroelectrie Barium Titanate Thin Films[J ]. J Appl Phys, 2001(90):5434-5437.

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