单晶β-Ga_2O_3纳米线的原位生长及其光致发光性能

In-situ growth and photoluminescence of single crystalline β-Ga_2O_3 nanowires

通过在N2气氛中将金属镓加热到900℃,在镓颗粒表面大面积生长出-βGa2O3纳米线.采用激光拉曼光谱仪、扫描电子显微镜和透射电子显微镜对产物的结构和形貌进行了表征.结果表明,所得产物为单斜相单晶结构Ga2O3纳米线,其直径为50-100 nm,长度为30-100μm.提出了Ga2O3纳米线可能的生长机理.室温下研究了所得Ga2O3纳米线的光致发光特性,观察到起源于氧空位的电子与镓-氧空位对上的空穴复合产生的发光峰在457 nm的蓝光发光.

β-Ga2O3 nanowires have been synthesized on the surface of gallium grains through heating gallium grains at 900 ℃ for 3 h in a N2 gas atmosphere. The structure and morphology of the products were characterized by means of Raman spectroscopy, scanning electron microscopy and transmission electron microscopy. The results shows that the β-Ga2O3 nanowires are of single crystalline with a monoclinic structure, their diameter and length are 50-100 nm and 30-100 micrometers, respectively. A possible mechanism was proposed to account for the formation of β-Ga2O3 nanowires. Photoluminescence spectrum of the β-Ga2O3 nanowires was measured at room temperature, and a strong blue photoluminescence with peak at 457 nm originated from the recombination of an electron on an oxygen vacancy and a hole on a gallium-oxygen vacancy pair was observed.