基体偏压对中频磁控溅射沉积DLC膜结构的影响

Effect of substrate bias on structure of DLC thin films deposited by MF magnetron sputtering

利用中频非平衡磁控溅射技术，以氩气和甲烷混合气体为工作气体，在载玻片和单品硅片上沉积含氢的类金刚石薄膜。改变加载在基体上的负偏压，在0-400V范围内，制备5种偏压值下的薄膜，研究偏压对薄膜结构的影响。用光学显微镜和AFM考察薄膜的光学形貌；激光Raman谱定性分析膜的化学组分；FTIR分析其C—H键合类型；纳米压痕法测量膜的硬度。结果表明：当基体上施加偏压-100V时，可以有效地提高沉积粒子与基体结合力以及薄膜的致密性，薄膜中正四面体的sp^3结构和sp^3CHn含量增加，纳米硬度提高。

Hydrogenated DLC （a-C：H） thin films were deposited on slides and single-crystal silicon wafers as substrates by MF unbalanced magnetron sputtering with argon combined with methane as process gas. The effects of 5 substrate bias voltages from 0V to 400V on the structure of corresponding DLC films were investigated. The surface morphologies of the films were observed using optical microscope and Atomic Force Microscope （AFM） and the chemical composition of DLC films were investigated by laser Raman spectroscopy, with the chemical bonding of C-H analyzed by FHR and the film hardness tested by Nano-indentation. The experimental results showed that the bonding strength between deposited particles and substrate and film compactness can be efficiently improved if the negative substrate bias is -100V, and the contents of tetrahedral sp^3 bond and sp^3 CHn bonding increase in films with nanohardness improved.