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化学机械抛光工艺中的抛光垫 被引量:5

Study on the Pad in Chemical Mechanical Polishing Process
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摘要 抛光垫是晶片化学机械抛光中决定表面质量的重要辅料。研究了抛光垫对光电子晶体材料抛光质量的影响:硬的抛光垫可提高晶片的平面度;软的抛光垫可改善晶片的表面粗糙度;表面开槽和表面粗糙的抛光垫可提高抛光效率;对抛光垫进行适当的修整可使抛光垫表面粗糙。 Polishing pad is an important component of the chemical mechanical polishing (CMP) system. Based on the analysis on the material and surface structure of CMP pad,effect has been studied about the polishing pads used to polish the photo-electronic crystal materials. The hard polishing pad can improve the substrate flatness,the soft polishing pad can improve the substrate surface roughness ,the grooved pad and the rough pad can improve the efficiency of polishing. Suitable conditioning can improve the surface roughness of polishing pad.
出处 《机械工程与自动化》 2008年第6期73-75,共3页 Mechanical Engineering & Automation
基金 江苏省科技厅科技攻关项目(BE2007077) 江苏省自然科学基础研究项目(BK2008197) 江苏省高校自然科学基础研究项目(06KJB460119) 江苏省大学生实践创新训练计划项目(07SSJCX026)
关键词 化学机械抛光 抛光垫 表面粗糙度 chemical mechanical polishing polishing pad surface roughness
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参考文献4

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同被引文献40

  • 1Li Yuzhuo.Chemical Mechanical Planarization (CMP) for Microelectronic Applications[J].合成化学,2004,12(z1):115-115. 被引量:4
  • 2魏昕,熊伟,黄蕊慰,袁慧.化学机械抛光中抛光垫的研究[J].金刚石与磨料磨具工程,2004,24(5):40-43. 被引量:20
  • 3徐军,苏良碧,徐晓东,赵志伟,赵广军.激光晶体的现状及发展趋势[J].无机材料学报,2006,21(5):1025-1030. 被引量:10
  • 4张朝辉,杜永平,常秋英,雒建斌.化学机械抛光中抛光垫作用分析[J].北京交通大学学报,2007,31(1):18-21. 被引量:11
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  • 7Elmufdi G L,Gregory P,Muldowne.CMP Pad Having Unevenly Spaced Grooves[P].US Patent 7267610,2007-09-11.
  • 8Muldowney G P.Polishing Pad HavingGrooves Configured to Promote Mixing Wakes During Polishing[P].US Patent 6974372,2005-12-13.
  • 9Toshiroh K,Doy,Kiyoshi Seshimo,KeisukeSuzuki,et al.Impact of novel pad groove designs on removal rate and uniformity of dielectric and copper CMP[J].Journal of The Electrochemical Society,2004,151(3):196-199.
  • 10Rosales-Yeomans D,Doi T,Kinoshita M,et al.Effect of pad groove designs on the frictional andremoval rate characteristics of ILDCMP[J].Journal of The Electrochemical Society,2005,152(1):62-67.

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