期刊文献+

基于单片机的脉冲电源控制系统设计

The Design of Control System for Pulse Power Based on MCS51 Single Chip Microcomputer
下载PDF
导出
摘要 硅片的电火花线切割是一种新型的工艺方法,由于硅片的高电阻率特点,脉冲电源的参数与传统线切割设备有较大不同。通过采用MCS51系列的单片机,设计一种基于高压直流电源改进为脉冲电源的控制系统,应用到高速走丝线切割机床上来对工件进行试切,可以取得理想的切割效果。 Wire Electrical Discharge Machining (WEDM) of silicon wafer is a new new technological process. Due to the high resistivity of silicon wafer, the parameters of pulse power are quite different from those used in traditional WEDM equipments. By using MCS51 single chip microcomputer, a control system of pulse power improved from high voltage DC power is designed. The trial application of the improved system in HS-WEDM Machine to cut workpiece produces perfect cutting results.
作者 张天瑜
出处 《南宁职业技术学院学报》 2008年第6期98-100,共3页 Journal of Nanning College for Vocational Technology
关键词 单片机 电火花线切割 脉冲电源 硅片 Single Chip Microcomputer WEDM Pulse Power Silicon Wafer
  • 相关文献

参考文献3

二级参考文献12

  • 1王辉堂,颜自勇,陈文芗.一种基于C51的多任务机制及应用[J].电子设计应用,2006(8):139-141. 被引量:9
  • 2Reynaerts D,Van Brussel H. Microstructuring of silicon by electro-discharge machining (EDM)-part I: theory. Sensors and Actuators A, 1997, 60:212-218.
  • 3Reynaerts D, Meeusan W, Van Brussel H. Mschining of three-dimensional microstructures in silicon by EDM. Sensors and Actuators A, 1998, 67:159-165.
  • 4Improvement of EDM efficency of silicon single crystal through ohmic contact, precision engineering. Journal of the International Societies for Precision Engineering and Nanotechnology, 2000,24 : 185- 190.
  • 5Lin C, Chang C, Chen C. Focus groups: impact of quality and process capability factors on the silicon wafer slicing process[J]. Int. J. Manuf. Technol. Manage, 2004, 6 : 171 - 184.
  • 6Yamada T, Kinai F, Ichikawa T, et al. Warpage analysis of silicon wafer in ingot slicing by wire-saw machine[ C] // Proceedings of the 8th International Conference on Numerical Methods in Industrial Forming Processes. Columbus, USA. 2004, 1459- 1463.
  • 7Okada A, Uno Y, Okamoto Y. A new slicing method of monocrystalline silicon ingot by wire EDM[D]. VDI Berichte. 1998, 417-424.
  • 8Peng WY, Liao YS. Study of electrical discharge machining technology for slicing silicon ingots[J]. Journal of Materials Processing Technology, 2003, 140: 274- 279.
  • 9Takino H, Ichinohe T, Tanimoto K, et al. High-quality cutting of polished single-crystal silicon by wire electrical discharge machining[ J ]. Precision Engineering, 2005, 29 : 423 - 430.
  • 10Luo Y F, Chen C G, Tong Z F. Investigation of silicon wafering by wire EDM[J]. J. Mater. Sci, 1992, 27:5805 - 10.

共引文献30

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部