异质结构掺锰氧化物（La0.60Sr0．4-xNaxMnO3）的磁电阻研究术

Study on Magnetoresistance of Heterostructure Manganate （La0.6Sr0.4-xNaxMnO3）

利用掺杂锰氧化物La0.60Sr0.05Na0.05MnO3和La0.60Sr0.15Na0.25MnO3两种块体材料串联焊接成异质结构样品，其磁电阻在不同温度出现两个峰值。得到启示：选取一系列磁电阻峰值在不同温度的材料，制成异质结构样品多层膜，适当调整各层膜厚度的比例，可以使多层膜的磁电阻在一个较宽的温度区间内保持基本稳定，并且有较好的磁场灵敏度，从而成为较好的磁电阻磁场传感器。

In order to improve temperature of colossal magnetoresistive response of the manganese oxide compounds, prepared the heterogeneous structure samples using manganite bulk La0.6Sr0.05Na0.35MnO3 and La0.6Sr0.15Na0.25MnO3. and obtain the enlightenment： If select a series of material whose magnetoresistance peaks are in the different temperature regions, can make the heterostructure sample multilayer films. By readjusting each film thickness proportion properly, may maintain its magnetoresistance stable basically in the wider temperature region, and make the heterostrueture sample has better magnetic field sensitivity. Therefore, can obtain the better magnetoresistance magnetic field sensor.