摘要
简述了SiC微波半导体的特性,通过与Si相关特性的比较,SiC在击穿电压、热传导率、增益特性等方面具有的显著优势,分析了SiC微波器件在有源相控阵雷达T/R组件中的应用前景,对T/R组件微波关键技术,功率放大链、高功率限幅器、低噪声接收机前端等微波半导体电路的设计思路进行了讨论,及SiC微波器件在T/R组件中的潜在应用,比较了Si和SiC时代,关键电路的特性及其技术状态,以及对未来军事电子设备相控阵雷达T/R组件发展的重要性。
The feature of SiC microwave semiconductor is introduced. Compared with Si semiconductor, SiC has remarkable advantages in breakdown electric-field intensity, heat conduction rate and gain characteristic. The application of active phased array radar and T/R modules are discussed in this paper. Also discussed is the key technology of microwave about T/R modules in power amplified chain, high power confined amplitude protection, low noise amplifier for receiver and so on. Also, the potential application of SiC microwave devices in T/R modules microwave circuits is explicated. Comparing Si with SiC periods, we analyze in detail the quality and technology state in the key circuit, and the importance of the development of the phased array radar for the future military electronic device.
出处
《中国电子科学研究院学报》
2008年第6期631-634,共4页
Journal of China Academy of Electronics and Information Technology
