聚乙炔/SnO_2异质结的光电流密度

Photocurrent Intensity of Polyacetylene Basic Heterojunction

用改进的Ｎａａｒｍａｎｎ法在ｎ型ＳｎＯ２基片上直接聚合成聚乙炔膜，制成ｐ－（ＣＨ）ｘ／ｎ－ＳｎＯ２异质结，用氩离子激光器作光源，测量了光电流密度与入射光强度的关系曲线．在仅考虑聚乙炔吸收光的情况下，从理论上导出聚乙炔基异质结的光电流密度公式。

A p-(CH) x/n-SnO 2heterojunction is made through directly synthesizing (CH) x on the surface of n-SnO 2 by the modifying method of Naarmann. The relationship of J sc versus incident power for the heterojuntion is measued by using argon-ion laser. Only considering the absorption of polyactyelene, the forlula of polyactyelenc,the fornula of photocurrent intensity of the polyacetylene basis heterojuntion bas been deduced.