摘要
本文报导了以水合RuO2为原料而采用固相反应、烧结工艺制备脉冲激光沉积用RuO2、BaRuO3、SrRuO3靶材的工艺.
In this paper, solid state reaction and sintering processing with RuO 2· n H 2O as raw material for fabricating target material of RuO 2 and BaRuO 3 and SrRuO 3 used in PLD method is reported. The composition, crystal structure and electrical conductivity of the materials were also examined. We first found that the sintered BaRuO 3 has a semiconductor metal transition near room temperature.
出处
《上海大学学报(自然科学版)》
CAS
CSCD
1997年第1期33-36,共4页
Journal of Shanghai University:Natural Science Edition
基金
上海市自然科学基金
关键词
钌氧化物
靶材
烧结
薄膜
制备
电性能
ruthenium containing oxides
target material
sintering
electrical conductivity