摘要
We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized for carrier injection tuning. The butt-joint technology enable optimize the passive waveguide as well as active section. By tuning mirror sections,the laser provides 35nm tuning while maintaining 〉30dB sidemode suppression ratio.
对接生长技术可以独立优化不同区域的波导结构,有利于制作高性能的半导体光电子集成器件.文中采用MOCVD对接生长技术制作了SGDBR激光器,通过载流子注入,器件准连续调谐范围为35nm,在调谐范围内边模抑制比大于30dB.
基金
supported by the National High Technology Research and Development Programof China(No.2006AA03Z427)
the State Key Development Programfor Basic Research of China(No.2003CB314903)
the National Natural Science Foundation of China(No.60677024)~~
