采用DGS降低相位噪声和提高输出功率的倒扣集成振荡器(英文)

FLIP-CHIP INTEGRATED OSCILLATOR WITH REDUCED PHASE NOISE AND ENHANCED OUTPUT POWER BY USING DGS

设计了一种新型的缺陷接地结构（DGS）并将之应用到倒扣集成毫米波振荡器中．分析并比较了具有DGS结构和没有DGS结构的两种振荡器性能．测试数据显示具有DGS结构的振荡器与没有DGS结构的振荡器相比，相位噪声降低4—6dB，输出功率增加0．8dBm．研究结果表明DGS结构嵌入到振荡器的谐振电路和输出端时，振荡器的相位噪声降低且输出功率增大．

A novel defected ground structure （DGS） was designed and applied to a flip-chip integrated millimeter wave oscillator. The characteristics of two oscillators with and without DGS were analyzed and compared. Measurement data shows that the phase noise of the oscillator with DGS is reduced by 4 - 6dB, and the output power of the oscillator is increased by 0.8dBm in comparison with the oscillator without DGS. It is found that, when DGS is embedded in the resonant tank and the output terminal of an oscillator, the phase noise can be reduced and the output power will be enhanced.