化学沉积法低温生长锰钴镍薄膜结晶性及红外椭偏光谱研究

INFRARED SPECTROSCOPIC ELLIPOSIMETRY AND CRYSTALLIZATION OF MANGANESE COBALT NICKELATE FILMS PREPARED BY CHEMICAL DEPOSITION AT LOW TEMPERATURE

使用化学沉积方法，在600℃温度下，成功制备锰钴镍（MnxCoyNi3-x-yO4（MCN）薄膜．传统的固熔烧结工艺合成MCN材料需要的温度条件约为1050—1200℃，这一温度相比，本文的方法使合成温度降低了许多．随着退火后处理温度从600℃升高到900℃，MCN薄膜的晶粒尺寸大小从20nm增大到50nm．同时还利用红外椭偏光谱测量获得MCN薄膜的介电常数和吸收系数．

Manganese cobalt nickelate films （Mnx Coy Ni3- x-y ） （MCN） were successfully prepared by chemical deposition method at the crystallization temperature of 600℃, which was greatly reduced from the traditional sintered temperature of 1050 - 1200℃. Our results show that the grain size of MCN films increases from 20 to 50 nm with the annealing temperature increasing from 600℃ to 900℃. The real part ε1 and imaginary part ε2 of the dielectric constants and absorption coefficients of MCN thin films were determined by infrared spectroscopic ellipsometry （IRSE）.