摘要
研究了新型光电聚合物材料聚1,4二(1-氰基)乙烯基撑苯撑3,7-N-辛基-吩噻嗪撑(PQP)的电学性能和光伏特性。首先制备了结构为ITO/PQP/Al的单层器件。在暗场条件下,器件的电流-电压特性曲线呈典型的二极管整流特征。在白光二极管照射下器件可以获得光伏响应,开路电压(Voc)为0.2 V,填充因子(ff)为0.27。此外,在单层器件的基础上,研究了与苝的衍生物PTCDI-C13结合制备的双层结构器件ITO/PQP/PTC-DI-C13/Al的光伏性能。与单层器件相比,双层器件的Voc可提高到0.9 V。双层器件的开路电压显著增加表明开路电压不仅仅受电极功函数的影响,还与受主的LUMO和施主的HOMO之间的能带有关。
The electronic and photovoltaic properties of a novel optoelectronic polymer, poly(3,7 N-octyl phenothiozinyl cyanoterephthalylidene) (PQP),been investigated. A single layer structure ITO/PQP/A1 is constructed firstly. Dark currentvoltage characteristics of the devices show a typical rectifying behavior. Photovoltaic response under illumination with white light LED is observed,with an open-circuit voltage (Voc) of 0.2 V and fill factor (ff) of 0.27. Double layer devices based on polymer PQP and a perylene derivative, N, N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13), are constructed for further investigation. The structure of the devices is ITO/PQP/PTCDI-C13/A1. The open-circuit voltage of the devices is increased to 0. 9 V. It is demonstrated that the Voc is affected by HOMO of the donor and LUMO of the acceptor as well as the work functions of electrodes.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2008年第12期1610-1613,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(20674004,20811120041)
国家重点基础研究发展计划资助项目(2008DFA61420)
北京市自然科学基金资助项目(3062016)
北京交通大学科学基金资助项目(2006XM043)