Ar^+注入多孔硅与Ar^+注入硅多孔结构的光致发光研究

Study of photoluminescences of the Ar^+ implanted porous silicon and the porous structure of Ar^+-implanted silicon

研究了中等能量(30 kev)Ar+注入多孔硅和中等能量(30 kev)Ar+先注入单晶硅后再进行电化学腐蚀成的多孔结构的光致发光特性。研究结果表明:中等能量(30 kev)Ar+注入多孔硅后,多孔硅原有的发光峰消失,主要是Ar+对多孔硅表面氧的剥离作用,使得与氧相关发光的结构消失,多孔硅不再发光;中等能量(30 kev)Ar+先注入单晶硅后再电化学腐蚀成的多孔结构中,通常多孔硅原有的580 nm附近发光峰强度随注入Ar+剂量的增加而增强,并有红移;同时在谱峰处于470 nm附近的微弱发光峰不因注入Ar+而明显变化。

We have mesured photolurninescences of the Ar^＋ implanted porous silicon and the porous structure of Ar^＋ -implanted silicon which is prepared by implanting Ar^＋ ions into single crystal silicon, conventional anodized oxidation at an en ergy of middle-energy （30 keV）. The results show that the PL intensity of Ar^＋ -implanted porous silicon is reduced,and the PL intensity of porous structure of Ar^＋ -implanfed silicon at 580 nm is enhanced. Meanwhile,the emissin peaks located around at 470 nm almost no changed.