碲镉汞器件接触孔的ICP刻蚀工艺研究

A Study of MCT Contact Hole Etching by ICP Process

介绍了ICP等离子体刻蚀技术的工作原理和主要工艺参数,阐述了碲镉汞器件接触孔ICP刻蚀工艺的特点和技术要求。通过一系列实验和分析,最终优化并确定了ICP刻蚀碲镉汞材料接触孔的工艺参数,获得了良好的刻蚀形貌和器件性能。

This paper gives a brief introduction to the ICP etching process ＆ equipment. All the parameters which influence the etching profile of contact hole are detailedly discussed. The final etching parameters are given after a series of experiments.