摘要
利用正电子湮没谱研究了不同离子数(F)/离子数(Cl)比BaFCl:Eu2+系列粉末样品.实验结果表明:当晶体中的离子数(F)/离子数(Cl)<1时,可以有效地产生F离子空位缺陷,当离子数(F)/离子数(Cl)比值在0.92附近的空位缺陷浓度最大.
In this paper, the positron annihilation spectra of BaFCl:Eu2+ were carried out The experimental results show that the vacant defects of F- ions may be effectively created in the BaFCl:Eu2+ compounds when the F/Cl ratio is less than 1 In addition, the best value of the F/Cl ratio is near 1
关键词
正电子湮没
X光存储材料
BaFCl
positron annihilation X-ray′s storage material BaFCl:Eu2+