摘要
We outline the experiments performed to gain further information about the structure and properties of cleaved InP surfaces. The experiments involved detecting the luminescence produced after cleaving thin InP plates within a high vacuum, by a process of converting the luminescence to an electrical signal which could be amplified and measured accurately. The experimental results show that the detected luminescence durations from cleaved InP are usually only about 10μs. It is believed that this time represents the time of travel of the crack with the actual recombination time being much shorter. Strong signals could also be picked up from cleaved InP in air.
We outline the experiments performed to gain further information about the structure and properties of cleaved InP surfaces. The experiments involved detecting the luminescence produced after cleaving thin InP plates within a high vacuum, by a process of converting the luminescence to an electrical signal which could be amplified and measured accurately. The experimental results show that the detected luminescence durations from cleaved InP are usually only about 10μs. It is believed that this time represents the time of travel of the crack with the actual recombination time being much shorter. Strong signals could also be picked up from cleaved InP in air.
