图案化铜纳米线阵列的制备

Preparation of patterned Cu nanowire arrays by UV-photolithography

采用紫外光刻法制得图案化的阳极氧化铝模板。在模板上蒸镀金膜后,采用电化学沉积法制备了铜纳米线,用扫描电子显微镜观察,研究了最佳电化学沉积时间。结果表明,铜纳米线阵列的图案与掩膜的图案完全一致,呈直径约5μm的圆形。铜纳米线的长度随沉积时间的增加而增长,沉积时间20min,即可制得长度约5μm的铜纳米线阵列结构。在此基础上可研制微器件。

The patterned anodic aluminum oxide （AAO） template was fabricated by UV-photolithography. A layer of Au film was sputtered on the patterned AAO template, then Cu nanowire was prepared by electrochemical deposition. The morphology of patterned nanomaterials was surveyed by scanning electron microscopy, optimum electrochemical depositional time was studied. The results show that the pattern of Cu nanowire array is consistent with mask pattern, which have many circles about 5 μm in diameter, and the length of nanowire increases when the electrodeposition time extends. The length of nanowire is about 5 μm when the deposit time is 20 min, which can be used to develop micro devices.