摘要
应用台积电(TSMC)0.18μ m CMOS工艺模型,设计了一种2.4GHz全集成低噪声放大器。通过ADS(Ad-vanced Design System)软件对电路进行了优化设计,仿真结果表明在1.8V电源电压下,工作电流约为6mA,输入输出匹配良好,在2.45GHz的中心频率下,它的噪声系数(NF)为2.605dB,增益(S21)为20.120dB。
A 2.4GHz integrated low noise amplifier has been designed in TSMC 0.18 μm CMOS process. Measurement results show this amplifier works well centered at 2.45GHz frequency, with a forward gain （$21） of 20.120dB and a noise figure of 2.605dB, while drawing about 6mA current from a 1.SV supply. The input and output matching is also very good.
出处
《中国新通信》
2008年第23期68-70,共3页
China New Telecommunications
