Trenchstop与NPT型IGBT性能比较与测试

Performance Compare and Test for Trenchstop and NPT IGBT

绝缘栅双极型晶体管(IGBT)在现代电力电子装置中得到了日益广泛的应用,尤其是第4代Trenchstop型IGBT的出现更具有革命性的意义。介绍了IGBT芯片技术的发展,着重分析了新一代Trenchstop型和目前应用较为普遍的NPT型IGBT的结构和性能,最后通过实验对两种相同等级、不同结构的器件进行了性能测试,结果表明Trenchstop型器件具有导通压降低、关断损耗小等优点。

IGBT is increasingly becoming the preferred switching device in modern power electronic applications, especially the invention of trenchstop IGBT has the revolutionary influence.This paper introduces the development of IGBT,compares the new generation Trenchstop IGBT with the NPT IGBT which is widely used.At last experiments are carried on for testing the performance of two kinds of IGBT under same current and voltage grade.Experimental results show Trench-stop IGBT has many excellent performances such as low on-state voltage and less turn-off power loss.