静电感应晶闸管的I-V特性物理分析

Physical Analysis of Static Induction Thyristor's I-V Characteristic

考虑到寿命不等时的双注入效应、载流子寿命,特别是少子空穴寿命的变化、电导调制效应、双注入空间电荷限制效应等因素,对静电感应晶闸管(Static Induction Thyristor,简称SITH)在正向阻断态的整个I-V特性进行了分段物理分析,给出了理论解释并进行了计算,得出的结论与实验观测结果相吻合。

Considering the carriers double injection effect, space charges limited effect, the variety of carrier lifetime etc., the paper analyzes the whole regions of SITH＇s I-V characteristics in the forward direction blocking state and gives physical explanations and calculations theoretically.The conclusion is accord with the experiment results.