摘要
通过分析现有镀膜工艺设备的电子束加热原理、结构和热量损耗,并针对实际应用过程中镀膜存在的问题,提出了对现有设备的改进措施,开发出一种新的镀厚膜工艺,较好解决了芯片镀厚膜的工艺技术难题和存在的镀厚膜工艺质量问题,大大提高了镀厚膜工艺的工作效率,极大地改善了特高压超大功率电力电子器件的电性能参数,收到了良好的效果。
A detailed analysis of the principles of electron beam heating structure and heat loss is given.And aim at the problems in the practical application of the existing semiconductor evaporation equipment.Some improvement proposals for a new semiconductor evaporation process are presented,which gives better solutions for the existing problems in the process technology difficulty and process quality of the thick film evaporation.With this method,the efficiency of the thick film evaporation could be improved for bigness increase,and the electrical characteristics of UHV high power devices could be greatly improved as well as a good result is obtained.
出处
《电力电子技术》
CSCD
北大核心
2008年第12期39-40,共2页
Power Electronics
关键词
镀膜
电子束加热/镀厚膜
evaporation
electron beam heating / thick film evaporation