SiC功率器件的研究和展望

Study and Perspective on SiC Power Devices

分析了碳化硅(SiC)功率器件的研究现状与发展趋势,给出了在SiC功率整流二极管、SiC功率晶体管以及关键工艺中取得的最新研究成果。研制出了具有较好整流特性的SiC肖特基势垒二极管,并对其输运机理和高温特性进行了研究。研制成功了国内第一个SiC MPS二极管,耐压高达600V,正向电压为3.5V时电流密度可达1000A/cm2。研制出国内第一个SiC MOSFET和第一个SiC BCMOSFET。所制备的SiC BCMOSFET可得到最高为90cm2/(V.s)的有效迁移率。分析了界面态电荷和界面粗糙对SiC MOSFET反型层迁移率的影响,其结果对提高SiC MOSFET器件特性有一定指导作用。

The present state and developmental direction of silicon carbide power devices are investigated.The recent progress which is related to rectifier diodes and transistors of SiC and key technology is presented.SiC Schottky diodes with fine rectification characteristic are fabricated.And transport mechanism and high-temperature characteristic of SiC Schottky diodes are studied.The first SiC MPS diode of inland is fabricated whose breakdown voltage is 600 V and forward current density is 1 000 A/cm^2 at 3.5 V.The first SiC MOSFET and the first SiC BCMOSFET with maximum effective mobility 90 cm^2/ （V.s） of inland are fabricated.The effect of interface state charges and interface roughness on inversion-layer mobility of SiC MOSFET is analyzed whose resuhs should accelerate the improvement of SiC MOSFET characteristic.