退火温度对ZnO：Al透明导电薄膜结构和性能的影响

Effects of annealing temperature on structure and properties of ZnO:Al thin films

采用溶胶-凝胶法（sol—gel）在普通载玻片上制备了ZnO：Al薄膜，在200～600℃下退火。利用XRD、紫外-可见光-近红外分光光度计和电阻测试仪等分析方法研究了不同退火温度对薄膜结构和光电性能的影响。结果表明，退火温度在300℃以上，薄膜开始结晶，400℃以上，薄膜出现明显结晶，且沿（002）方向择优取向，随着退火温度升高，（002）峰的强度逐渐增强，晶粒尺寸逐渐增加；薄膜在可见光范围内的透过率均〉85％以上，退火温度高的薄膜在可见光范围内的透过率明显提高，光学带隙在3．32～3．54eV，且随着温度的升高而降低；薄膜的电阻率随退火温度的增高而有所降低，但是仍较高，在10^3Ω·cm量级。

Multilayered thin films of transparent conductive aluminum-doped ZnO have been deposited on the glass substate by the sol-gel method,annealing in 300-600℃. Effects of annealing temperature on structure and properties of ZnO ： Al thin films were investigated by XRD,UV-visble spectrophotometry and four-point probe method. Experimental results indicated that the annealing temperature affected structure and properties of the thin films considerably. The thin film begins crystallizing above 300℃ and crystallized distinctly above 400℃ orienting more preferentially along the （002） direction;the transmittance of the thin films is higher than 85% in visible region, the transmittance in visible region became higher with higher annealing temperautre, optical bandgap of ZnO ： Al thin films are 3.32-3.54eV;the resistivities of the thin film were decreased when annealing temperature was increased,but still high in 10^3Ω·cm quantity.