基于金硅腐蚀自停止技术的亚微米梁制作研究

Research on fabrication of submicro beams with Au/Si galvanic etchstop technique

提出了利用无电极电化学腐蚀自停止技术制作亚微米梁结构的新工艺方法。根据金硅腐蚀自停止现象发生的条件,结合硅材料的各向异性腐蚀特性,设计器件结构,利用腐蚀暴露面积变化实现了硅的选择性自停止腐蚀。在(111)型硅片上利用原电池钝化效应一次性腐蚀出与衬底绝缘,由约4μm厚的金电极支撑,厚度约为235 nm的亚微米梁结构,具有制作简单、成品率高、成本低等特点,应用前景广阔。

A novel process of fabricating sub-micro beams with contactless electrochemical etch-stop technique is presented. The etch-stop is realized by changing exposed etching area of the device according to the characteristic of anistropic etching of silicon and the reqirement of Au/Si etch-stop. The sub-micro beam with the thickness of 235nm is formed on （111） wafer with the galvanic cell passivation, which is insulated from substrate and supported by the Au electrode with 4 p^m thickness. This is a promising process with easy fabrication steps, high yield,low cost and wide appilication.